Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Patent
1998-10-30
2000-06-06
Fourson, George
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
438166, 438935, 438937, H01L 21324
Patent
active
060717963
ABSTRACT:
The invention provides a method of making silicon-on-glass substrates used in the manufacture of flat panel displays. A layer of amorphous silicon film is deposited on a glass substrate. The amorphous silicon is annealed by excimer laser annealing, transforming the amorphous silicon into polycrystalline silicon. The excimer laser annealing is carried out in a predominantly air ambient environment at atmospheric pressure and room temperature. The process requires no environmental chamber to house the substrate during excimer laser annealing. The process displaces the ambient air immediately surrounding the target region on the surface of the silicon film, where the laser beam strikes the silicon film, with inert gas. As a result, the ambient environment at the point of annealing on the substrate is depleted of oxygen and the oxygen content of the resultant polycrystalline silicon layer is kept below a predetermined level. The process yields polycrystalline silicon on the flat panel display substrates which have fewer defects and improved crystallization, compared with polycrystalline silicon formed by ELA in air.
REFERENCES:
patent: 5147826 (1992-09-01), Liu et al.
patent: 5773329 (1998-06-01), Kuo
Voutsas, T. et al., "Characteristics of Excimer Laser Annealed Polysilicon . . . Thin Film Transistor Devices", Proceedings of the SPIE, vol. 3014, p. 112-118, 1997.
Article entitled, Excimer-Laser-Annealed Poly-Si Thin-Film Transistors by S.D. Brotherton, D.J. McCullock, J.B. Clegg and J.P. Gowers, published in IEEE Transactions on Electron Devices, vol. 40, No. 2, Feb. 1993, pp. 407-413.
Article entitled, "Effects of Oxygen on Crystallization of Amorphous Silicon Films and Polysilicon TFT Characteristics" by Yong-Min Ha, Seong-Hoon Lee, Chul-Hi Han and Choong-Ki Kim, published in Journal of Electronic Materials, vol. 23, No. 1, 1994, pp. 39-45.
Article entitled, "Surface Roughness Effects in Laser Crystallized Polycrystalline Silicon" by D.J. McCulloch and S.D. Brotherton, published in Appl. Phys. Lett. 66(16), Apr. 1995, pp. 2060-2062.
Article entitled, "Oxygen effect on the electrical characteristics of polycrystalline silicon films", by R. Angelucci, L. Dori and M. Severi, published in Appl. Phys. Lett. 39(4), Aug. 1981, pp. 346-348
Article entitled, "Comprehensive Study of Lateral Grain Growth in Poly0Si Films by Excimer Laser Annealing and Its Application to Thin Film Transistors", by H. Kuriyama,T. Nohda, Y. Aya, T. Kuwahara, K. Wakisaka, S. Kiyama and S. Tsuda, published in Appl. Phys. vol. 33(1994) pp. 5657-5662, Part 1, No. 10, 10-94.
Article entitled, "Inverse Staggered Poly-Si and Amorphous Si Double Structure FT's for LCD Panels with Peripheral Driver Circuits Integration", by T. Aoyama, K. Ogawa, Y. Mochizuki and N. Konishi, published in IEEE Transactions on Electron Devices, vol. 43, No. 5, May 1006, pp. 701-705.
Article entitled, "Grain Growth in Laser Dehydrogenated and Crystallized Poly-crystalline Silicon for Thin Film Transistors", by P. Mei, J.B. Boyce, M. Hack, R. Lujan, S.E. Ready, D.K. Fork, R.I. Johnson and G.B. Anderson published in J. Appl. Phys. 76(5), Sep. 1, 1994, pp. 3194-3199.
Fourson George
Ripma David C.
Sharp Laboratories of America Inc.
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