Method of controlling effective channel length of semiconductor

Details Method of controlling effective channel length of semiconductor Method of controlling effective channel length of semiconductor

1998-11-06

2000-08-01

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

148DIG32, H02L 21425

Patent

active

060966289

ABSTRACT:
A semiconductor device and a method of manufacturing a semiconductor device with an effective channel length that is less than the physical gate length avoids requiring improving the masking, lithography and etching process steps by increasing the implantation energy of a pre-amorphizing implant. The pre-amorphizing implant is performed after the doping of the source and drain areas and after activation of the dopants. The implantation energy is sufficient to introduce damage into the substrate to allow for increased movement of the dopants in the substrate. Subsequent annealing steps performed during silicidation cause the source and drain areas to expand toward each other and reduce the effective channel length. This channel length reduction leads to improved device performance through higher I.sub.dsat, etc.

REFERENCES:
patent: 4683645 (1987-08-01), Naguib et al.
patent: 4835112 (1989-05-01), Pfiester et al.
Ozturk et al., Appl. Phys. Lett. 52 (12), pp. 963-965, Mar. 21, 1988.
Wolf et al., Silicon processing for the VLSI era, V1, p. 327, 1986.
Hsiao et al., An Advanced Ge Preamophization Salicide Tech. for Ultra Thin Film SOI CMOS Devices, IEEE, pp. 309-311, 1997.
Segawa et al., A .18 um Ti-Salicided p-MOSFET with Shallow Junctions, Fabricated by RTP in an NH3 Ambient, IEEE, pp. 443-446, 1996.

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