Method of controlling defects of a silicon single crystal

Details Method of controlling defects of a silicon single crystal Method of controlling defects of a silicon single crystal

1998-03-19

1999-09-07

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 2, 117 20, C30B 1520

Patent

active

059481595

ABSTRACT:
When the silicon single crystal is pulled up, the nucleation rate of the void cluster is obtained from the forming energy of the cluster of the vacancies in the silicon single crystal. The growth shrinkage of the cluster is obtained basing on the deviation of the flowing-into amount to the cluster of the vacancies and the self-interstitials, and the pulling-up speed or the temperature distribution of the furnace is modified to inhibit the growth of the cluster so as to inhibit the grown-in defects of the silicon single crystal.

REFERENCES:
"Diffusion Behavior of Point Defects in Si Crystal during Melt Growth IV: Numerical Analysis", Habu et al.; Jpn. J. Appl. Phys. vol. 33(1994) pp. 1234-1242, Part 1, No. 3A, Mar. 1994.
"Formation Process of Grown-In Defects in Czochralski Grown Silicon Crystals", Nakamura et al.; Journal of Crystal Growth 180(1997) 61-72.
"Control of Grown-in Defect Formation Process in Czochralski Silicon Crystals", Nakamura et al.; Proceedings of Kazusa Akademia Park Forum on the Science and Technology of Silicon Materials, Nov. 1997, pp. 197-210.
"On the dynamics of the oxidation-induced stacking-fault ring in as-grown Czochralski silicon crystals" Sinno et al., Appl. Phys. Lett. 70(17) Apr. 1997 pp.2250-2252.
"Transmission Electron Microscope Observation of "IR Scattering Defects" in As-Grown Czochralski Si Crystals", Kato et al., Jpn. J. Appl. Phys. vol. 35(1996) pp. 5597-5601, Part 1, No. 11, Nov. 1996.
"The Direct Observation of Grown-in Laser Scattering Tomography Defects in Czochralski Silicon", Nishimura et al., Journal of the Electrochemical Society, vol. 143, No. 10, Oct. 1996; pp. L243-L246.

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