Method of controlling defect orientation in silicon crystal ribb

Details Method of controlling defect orientation in silicon crystal ribb Method of controlling defect orientation in silicon crystal ribb

1976-07-16

1978-10-24

Emery, Stephen J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617SP, 156DIG64, 156DIG65, 156DIG88, B01J 1718, C01B 3302

Patent

active

041219651

ABSTRACT:
The orientation of twinning and other effects in silicon crystal ribbon growth is controlled by use of a starting seed crystal having a specific {110} crystallographic plane and <112> crystallographic growth direction.

REFERENCES:
patent: B584997 (1976-03-01), Cizzek
patent: 2961305 (1960-11-01), Dash
patent: 3130040 (1964-04-01), Faust
patent: 3341361 (1967-09-01), Gorski
patent: 3591348 (1971-07-01), La Belle, Jr.
patent: 3759671 (1973-09-01), Bleil
patent: 3977934 (1976-08-01), Lesk
Dash, Growth of Silicon Crystals Free From Dislocations, J. of App. Phys., vol. 30, #4, Apr. 1959, pp. 459-474.
Barrett, "Growth of Wide, Flat Crystals of Silicon Web, J. Electro. Chem. Soc., Solid State Sci., Jun. 1971, vol. 118, #6, pp. 952-957.

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