Method of controlling crystal orientation of PZT and PLZT thin f

Details Method of controlling crystal orientation of PZT and PLZT thin f Method of controlling crystal orientation of PZT and PLZT thin f

1993-04-16

1995-09-26

Utech, Benjamin L.

Coating processes

Electrical product produced

Piezoelectric properties

4271263, 427240, 4273764, 427380, 501134, 501135, 501136, 501137, 501152, B05D 512, C04B 3546

Patent

active

054532949

ABSTRACT:
In the production of ferroelectric PZT or PLZT thin film by the sol-gel method, application of precursor solution (sol) onto a substrate is followed by heat-treatment for pyrolysis at 150.degree.-250.degree. C., 250.degree.-359.degree. C., or 450.degree.-550.degree. C., and further firing for crystallization at 500.degree.-800.degree. C., whereby crystal orientation in the direction of the (111) plane, or the (111) and (100) planes, or the (100) and (200) planes can be effected.

REFERENCES:
patent: 4963390 (1990-10-01), Lipeles et al.
patent: 5028455 (1991-07-01), Miller et al.
Patent Abstracts of Japan, Ueda Ichiro; others, "Ferroelectric Thin-Film And Manufacture Thereof", Publication No. JP4005874, Date Jan. 9, 1992, Abstract Publ Date Apr. 21, 1992 vol. 016150.
B. M. Melnick et al., "Process Optimization and Characterization of Device Worthy Sol-Gel Based PZT for Ferroelectric Memories", Ferroelectrics, 1990, vol. 112, pp. 329-351.
Yi et al, J. Appl. Phys. 64 2717 (1988).

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