Method of controlling a plasma etching process by monitoring the

Details Method of controlling a plasma etching process by monitoring the Method of controlling a plasma etching process by monitoring the

1979-04-13

1980-06-10

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156657, 204192E, 219121P, 250531, 324 65R, 328132, H01L 21306

Patent

active

042071372

ABSTRACT:
A plasma etching process wherein the end point of the reaction can be accurately determined for fine line definition. This is accomplished by monitoring the impedance of the plasma during the reaction. The reaction is stopped at, or a predetermined time after, the change in impedance reaches a zero value, which is either a maximum or minimum depending upon the gases utilized.

REFERENCES:
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patent: 3757733 (1973-09-01), Reinberg
patent: 3766411 (1973-10-01), Arnold
patent: 3867216 (1975-02-01), Jacob
patent: 4041404 (1977-08-01), Lewis
patent: 4064408 (1977-12-01), Hon et al.
patent: 4115184 (1978-09-01), Poulsen
Ukai et al., "End Point Determination . . . Monitoring" at American Vacuum Soc. 25th National Symposium, (11/78), San Francisco, Ca., pp. 1-6.
Somekh, "Introduction to . . . Etching," Journal of Vacuum Science Tech., vol. 13, No. 5, (Sep. 1976), pp. 1003-1007.
Daley et al., "Determining the Etching . . . Etching," IBM Technical Disclosure Bull., vol. 20, No. 11B, (4/78) p. 4802.

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