method of controlling a MOS-type photodetector

Details method of controlling a MOS-type photodetector method of controlling a MOS-type photodetector

2006-07-18

2006-07-18

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S290000, C438S048000, C438S057000

Reexamination Certificate

active

07078752

ABSTRACT:
A method of controlling a MOS-type photodetector includes transferring electrical charge between a photodiode (12) and a sensing node (3) via a transfer transistor. The electrical potential of the sensing node (3) takes an extreme value when a maximum quantity of electrical charge is stored on the sensing node (3). During the electrical charge transfer, an electrical potential is applied to the gate electrode of a transfer transistor in such a way that the electrical potential of the channel (2) of the transfer transistor is brought to a value equal to the extreme value of the electrical potential of the sensing node (3) multiplied by a number greater than or equal to unity.

REFERENCES:
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patent: 5892253 (1999-04-01), Merrill
patent: 5903021 (1999-05-01), Lee et al.
patent: 5904493 (1999-05-01), Lee et al.

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