Method of continuously forming a large area functional deposited

Details Method of continuously forming a large area functional deposited Method of continuously forming a large area functional deposited

1994-12-08

1996-06-04

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272555, 118718, 118723MW, 118729, B05D 306, H05H 146

Patent

active

055231268

ABSTRACT:
A method for forming a large area functional deposited film by a microwave PCVD method by continuously moving an elongated member in its lengthwise direction, and forming a columnar film-forming chamber the side wall of which is an intermediate portion of the moving elongated member. A deposited film forming raw material gas is introduced into the film-forming space via a gas supply device. Microwave plasma in the film-forming space is generated by radiating microwave energy from a microwave applicator while continuously, at the same time as that of the introduction of the raw material gas, moving a movable sheet made of a dielectric material which is positioned in contact with a microwave introduction opening and the surface of the microwave introduction opening. A deposited film can then be formed on the surface of the elongated member which constitutes the side wall and which is being continuously moved, the side wall constituted by the elongated member being exposed to the microwave plasma.

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