Method of contact structure formation

Details Method of contact structure formation Method of contact structure formation

1997-01-15

2000-09-19

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438638, 438672, H01L 214763

Patent

active

06121129&

ABSTRACT:
A method of forming a semiconductor structure having features of differing sizes, includes forming a first layer on a semiconductor substrate; patterning only a first plurality of features of a first feature size on the first layer; removing portions of the first layer, the portions corresponding to the first plurality of features, filling the first plurality of openings; forming a second layer, the second layer overlying the first layer and the filled openings; patterning a second plurality of features of a second feature size on the second layer; removing portions of the first layer and second layer, the portions corresponding to the second plurality of features, the second plurality of openings extending through the first and second layers, and filling the second plurality openings.

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