Method of contact hole burying

Details Method of contact hole burying Method of contact hole burying

1996-09-25

1998-12-01

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438628, 438632, 438637, 438643, 438644, 438646, 438648, 438906, H01L 214763

Patent

active

058438378

ABSTRACT:
A contact hole burying method is provided including the steps of: coating an oxide layer on a substrate and removing the oxide layer except for a portion thereof to form a contact hole extending through the oxide layer in electrical contact with the oxide layer; sequentially forming a metal barrier layer and wet layer on the oxide layer and inside the contact hole to form an electrical connection to the substrate; forming a conductive metal layer on the wet layer; removing impurity ions and oxide material, which remain in the conductive metal layer which decrease mobility of metal atoms on a surface of said conductive layer due to absorption and oxidation, by a cleaning-etching process using a plasma; and reflowing the conductive metal layer at a relatively low temperature in a reactive furnace where the cleaning-etching process is performed to completely fill the contact hole.

REFERENCES:
patent: 4997518 (1991-03-01), Madokoro
patent: 5124780 (1992-06-01), Sandhu et al.
patent: 5164330 (1992-11-01), Davis et al.
patent: 5478780 (1995-12-01), Koerner et al.
patent: 5521121 (1996-05-01), Tsai et al.
patent: 5554563 (1996-09-01), Chu et al.

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