Method of connecting metal conductor to ceramic substrate

Metal fusion bonding – Process – Metal to nonmetal with separate metallic filler

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228124, 22826312, 29843, B23K 104, H01R 906, H05K 300

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active

048010677

ABSTRACT:
A method of connecting a metal conductor to a ceramic substrate including the steps of providing a terminal portion on the ceramic substrate, the ceramic substrate having a dielectric constant less than or equal to 7.0 units and a coefficient of thermal expansion of 5.times.10.sup.-6 /.degree. C. or less, forming at least one of a buffer layer and a barrier layer overlying the terminal portion of the ceramic substrate, wherein the buffer layer consists essentially of Cu and the barrier layer consists essentially of a material selected from the group consisting of Ni, Pd, and Pt, and brazing a metal conductor to the terminal portion of the ceramic substrate through the at least one of the buffer layer and the barrier layer with an Ag-based brazing filler material.

REFERENCES:
patent: 3649803 (1972-03-01), Desmond et al.
patent: 3862488 (1975-01-01), Pessell et al.
patent: 4610934 (1986-09-01), Boecker et al.
"A Low Stressed Bonding Structure for Thin Film Adhesion", Research Disclosure, Oct. 1986, No. 270, 27033.

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