Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-04-07
1999-08-31
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, 20419226, C23C 1435
Patent
active
059449632
ABSTRACT:
The invention provides a silicon carbide sputtering target comprising non-stoichiometric silicon carbide, SiC.sub.x, where x is the molar ratio of carbon to silicon and x is greater than about 1.1 but less than about 1.45. The sputtering target of this invention is superior to sputtering targets prepared from presently available non-stoichiometric silicon carbide in that the DC magnetron sputtering rate using the new sputtering target is nearly an order of magnitude higher than the rate achievable with presently available targets. The invention also includes processes for making the new sputtering target and preparing superior silicon carbide films by sputtering the target.
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Keese William J.
Ruppel Irving B.
DiMauro Thomas M.
Nguyen Nam
The Carborundum Company
Ver Steeg Steven H.
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