Method of cleaving GaN/sapphire for forming laser mirror facets

Details Method of cleaving GaN/sapphire for forming laser mirror facets Method of cleaving GaN/sapphire for forming laser mirror facets

2007-04-24

2007-04-24

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S058000, C219S121600, C219S121670, C438S033000, C438S460000

Reexamination Certificate

active

10602714

ABSTRACT:
A laser device has a substrate and at least one GaN-based layer upon a first surface of the substrate, and the laser device is cleaved by cutting linear grooves into a second surface of the substrate such that the grooves are in alignment with vertical planes of the substrate. The substrate and the at least one GaN-based layer are cleaved along the vertical planes. The cutting is performed using a laser beam from an external laser source.

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