Method of cleaning semiconductor substrate

Cleaning and liquid contact with solids – Processes – Using solid work treating agents

Reexamination Certificate

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Details

C134S002000, C134S003000, C134S007000, C134S030000, C134S031000, C134S042000, C438S691000, C438S692000, C438S693000

Reexamination Certificate

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07318870

ABSTRACT:
A cleaning method for a semiconductor substrate including placing the semiconductor substrate into a cleaning chamber and injecting ozone gas (O3) into the cleaning chamber. This process operates to cleanse the semiconductor substrate without corrosion or etching of the semiconductor substrate; even when the substrate has metal layer made of tungsten.

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patent: 1999-000064 (1999-01-01), None
patent: WO 01/07177 (2001-02-01), None
Handbook of Semiconductor Wafer Cleaning Technology (W. Kern, 1993, p. 13, 24).

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