Method of cleaning reaction tube and exhaustion piping system in

Details Method of cleaning reaction tube and exhaustion piping system in Method of cleaning reaction tube and exhaustion piping system in

1995-04-26

1997-06-10

Snay, Jeffrey

Cleaning and liquid contact with solids

Processes

Hollow work, internal surface treatment

134 2, 134 3, 134 221, 134 2212, 134 2218, 134 37, 134 42, 438905, B08B 700, B08B 900

Patent

active

056371535

ABSTRACT:
After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.

REFERENCES:
patent: 5294262 (1994-03-01), Nishimura
patent: 5380370 (1995-01-01), Niino et al.

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