Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2011-01-04
2011-01-04
Kackar, Ram N. (Department: 1716)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C156S345240, C156S345250, C156S345260, C156S345270
Reexamination Certificate
active
07862736
ABSTRACT:
Method of cleaning a plasma etching apparatus capable of suppressing variation in line width among wafers in a single lot, and improving throughput in the cleaning process, includes steps of supplying a cleaning gas into a chamber of a plasma etching apparatus; igniting a plasma of the cleaning gas in the chamber; and allowing plasma cleaning to proceed in the chamber, by bringing the cleaning gas in plasma form into contact with a deposit adhered on the inner wall of the chamber so as to etch off the deposit, wherein in the step of plasma cleaning in the chamber, intensity of plasma emission ascribable to the deposit adhered on the inner wall of the chamber is detected in a time-dependent manner, and the plasma cleaning in the chamber is terminated based on changes in the intensity of the plasma emission.
REFERENCES:
patent: 6189482 (2001-02-01), Zhao et al.
patent: 6903025 (2005-06-01), Mizushima
patent: 2003/0000546 (2003-01-01), Richardson et al.
patent: 10-74732 (1998-03-01), None
patent: 2004-235361 (2004-08-01), None
Kackar Ram N.
NEC Electronics Corporation
Young & Thompson
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