Cleaning and liquid contact with solids – Processes – Hollow work – internal surface treatment
Reexamination Certificate
2005-08-30
2005-08-30
Kornakov, M. (Department: 1746)
Cleaning and liquid contact with solids
Processes
Hollow work, internal surface treatment
C134S001100, C134S902000, C134S031000, C134S036000, C438S905000, C156S345350, C156S345470
Reexamination Certificate
active
06935351
ABSTRACT:
A cleaning method for CVD apparatus wherein by-products such as SiO2and Si3N4adhered to and deposited on surfaces of the inner wall, electrodes and other parts of a reaction chamber at the stage of film formation can be removed efficiently. Furthermore, the amount of cleaning gas discharged is so small that the influence on environment such as global warming is little and cost reduction can be also attained. After the film formation on a base material surface by the use of CVD apparatus, a fluorinated cleaning gas containing a fluorcompound is converted to plasma by means of a remote plasma generator, and the cleaning gas having been converted to plasma is introduced into a reaction chamber so that any by-products adhered to inner parts of the reaction chamber is removed.
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Kosano Yoshihide
Murata Hitoshi
Shibata Koji
Tsuji Naoto
Wani Etsuo
Anelva Corporation
Daikin Industries Ltd.
Hitachi Kokusai Electric Inc.
Kanto Denka Kogyo Co. Ltd.
Kornakov M.
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