Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2011-08-30
2011-08-30
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S057000, C438S080000, C438S700000, C438S508000
Reexamination Certificate
active
08008208
ABSTRACT:
The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of a p-type doped region formed on a silicon substrate so that a high quality passivation layer can be formed thereon. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface.
REFERENCES:
patent: 2010/0015749 (2010-01-01), Borden
patent: 2010/0311203 (2010-12-01), Borden et al.
Shu Jen
Stewart Michael P.
Xu Li (Sherry)
Zhou Lisong
Applied Materials Inc.
Le Dung A.
Patterson & Sheridan L.L.P.
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