Method of cleaning and forming a negatively charged...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S057000, C438S080000, C438S700000, C438S508000

Reexamination Certificate

active

08008208

ABSTRACT:
The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of a p-type doped region formed on a silicon substrate so that a high quality passivation layer can be formed thereon. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface.

REFERENCES:
patent: 2010/0015749 (2010-01-01), Borden
patent: 2010/0311203 (2010-12-01), Borden et al.

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