Method of cleaning a wafer

Details Method of cleaning a wafer Method of cleaning a wafer

2005-08-24

2008-12-23

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C134S001200, C134S001300, C438S424000, C438S710000, C257SE21279, C257SE21546

Reexamination Certificate

active

07468326

ABSTRACT:
A wafer is provided and loaded in a reaction chamber. Subsequently, the wafer is lifted up, and a dry clean process is performed on the wafer to clean the front side, the back side, and the bevel of the wafer. Following that, a deposition process is performed on the wafer. The dry clean process and the deposition process are carried out in an in-situ manner.

REFERENCES:
patent: 6301434 (2001-10-01), McDiarmid
patent: 6365518 (2002-04-01), Lee et al.
patent: 2001/0054387 (2001-12-01), Frankel et al.
patent: 2006/0051967 (2006-03-01), Chang et al.
patent: 1506172 (2004-06-01), None

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