Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-30
2007-01-30
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S710000, C438S906000, C257SE21226
Reexamination Certificate
active
10175812
ABSTRACT:
A method of cleaning a surface of a silicon wafer includes subjecting the surface of the silicon wafer to a hydrogen (H2) gas plasma containing at least one inert gas while biasing the hydrogen plasma with a RF bias power to direct the hydrogen (H2) plasma to clean the surface of the silicon wafer.
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Jung Sunhyuk
Koo Kyeong-mo
Park Sang-wook
Um Hyeon-ill
Won Jai-hyung
Isaac Stanetta
Lebentritt Michael
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