Method of cleaning a plurality of semiconductor devices

Details Method of cleaning a plurality of semiconductor devices Method of cleaning a plurality of semiconductor devices

1992-06-05

1993-11-09

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437226, 437129, 148DIG28, 148DIG131, H01L 21302, B44C 122

Patent

active

052599256

ABSTRACT:
A method for cleaving semiconductor devices along planes accurately positioned. Resist is applied to a major surface of the semiconductor device and a mask is projected upon the resist covered major surface. The mask is opaque in those regions in which no cleave is desired. Following the exposure of the resist, the removal of the mask and the development of the resist, an ion beam is positioned incident upon the semiconductor surface such that ion beam etching occurs in the areas in which no resist covers the semiconductor structure. Once a sufficient depth is etched in the areas not covered with resist such that the strength of the semiconductor structure in those areas is significantly less than in those areas covered by resist, the ion beam etching process is ended and the resist is stripped from the semiconductor structure. Subsequently, force is applied within the area in which the ion beam etching occurred to cleave the semiconductor structure within that region. Such cleaving may occur either prior or subsequent to etching of facets for the semiconductor devices.

REFERENCES:
patent: 4237601 (1980-12-01), Woolhouse et al.
patent: 4610079 (1986-09-01), Abe et al.
patent: 4865684 (1989-09-01), Boudma
patent: 4869780 (1989-09-01), Yang et al.
patent: 4883771 (1989-11-01), Kumabe et al.
patent: 4904617 (1990-02-01), Muschke
patent: 4994142 (1991-02-01), Appelbaum
patent: 5047364 (1991-09-01), Hattori
Silicon Processing for the VLSI ERA; vol. 1; pp. 407-409, 418-425; Wolf et al, 1986.
GaInAsP/Inp Stripe-Geometry laser with a reactive ion etched facet; Coldren et al; Appl. Phys. Lett 37 (8); 15 Oct. 1980.

Affiliated with

Also associated with

Rating

Method of cleaning a plurality of semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of cleaning a plurality of semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of cleaning a plurality of semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1140127