Method of chemical vapor deposition of boron nitride using polym

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427576, 427597, 4272481, 427337, C23C 1634, C23C 1650, B05D 306

Patent

active

053208781

ABSTRACT:
Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film.

REFERENCES:
patent: 4758539 (1988-07-01), Brown et al.
patent: 4970095 (1990-11-01), Bolt et al.
patent: 5023213 (1991-06-01), Maya
patent: 5030744 (1991-07-01), Funayama et al.
patent: 5169613 (1982-12-01), Shore et al.
patent: 5175020 (1992-12-01), Doellein et al.
Maya, et al. "Polymeric Cyanoborane, (CNGH.sub.2).sub.n :Single Source for Chemical Vapor Deposition of boron Nitride Films," J. Am. Ceram. Soc., 74,2 406-409 (Feb. 1991).
A. Lipp, et al. "Hexagonal Boron Nitride: Fabrication, Properties and Applications," J. of European Ceram. Soc., 5, (1989), 3-9.
S. P. S. Arya, et al. "Preparation, Properties and Applications of Boron Nitride Thin Films," Thin Solid Films, 157, (1988), 267-282.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of chemical vapor deposition of boron nitride using polym does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of chemical vapor deposition of boron nitride using polym, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of chemical vapor deposition of boron nitride using polym will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1247974

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.