Method of chemical vapor deposition and reactor therefor

Details Method of chemical vapor deposition and reactor therefor Method of chemical vapor deposition and reactor therefor

1995-07-13

1998-05-12

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118724, 118715, C23C 1600

Patent

active

057499748

ABSTRACT:
A reactor for chemical vapor deposition which is capable of producing semiconductor crystalline thin films having small transition widths. The reactor includes a cold-wall type reaction chamber that is equipped with a gas inlet at one end and a gas outlet at the other end and a semiconductor substrate support which supports a semiconductor substrate so that a main surface thereof is horizontal. A reactant gas is caused to flow horizontally through the reaction chamber to effect the growing of a crystalline thin film on the main surface of the semiconductor substrate. The semiconductor substrate is arranged within the reactor chamber within a distance W which is measured from a leading edge of the semiconductor substrate at a most upstream position along a direction toward the gas outlet where W indicates an internal width of the reaction chamber. The semiconductor substrate is also in a location having a W/G ratio of 15 or greater, where G represents a distance between the main surface of the semiconductor substrate and a ceiling of the reaction chamber.

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