Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-06-19
2007-06-19
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S690000, C438S693000, C438S508000
Reexamination Certificate
active
10924417
ABSTRACT:
Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.
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European Search Report for EP 00 31 1569 dated Nov. 12, 2003 (AMAT/3786.EP).
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Lam Gary
Li Jui-Lung
Li Shijian
Mai David
Redeker Fred C.
Le Dung A.
Patterson and Sheridan
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