Method of checking the accuracy of the result of a multistep etc

Details Method of checking the accuracy of the result of a multistep etc Method of checking the accuracy of the result of a multistep etc

1997-12-16

2000-06-20

Skane, Christine

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

216 84, 356373, 356375, C23F 100, G01B 1114

Patent

active

060774495

ABSTRACT:
A method is disclosed for checking the accuracy of the result of a multistep etching process for forming depressions in a substrate. The check is made possible in a simple manner by providing line patterns on the etch masks. The line patterns on the etch masks for different etching steps are different and form a vernier system.

REFERENCES:
patent: 4529314 (1985-07-01), Ports
patent: 5017514 (1991-05-01), Nishimoto
patent: 5470782 (1995-11-01), Schwalke et al.
patent: 5766809 (1998-06-01), Bae
"MEMS: Small machines for the microelectronics age" by Koester, et al. MCNC MEMS Technology Applications Center, Jan. 1996, pp. 93-94. XP-000749841.
Geiser, Ralph, "Reticle Production", In: The Instrument Maker, Jul./Aug. 1948 pp. 4, 6-8, 12.

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