Method of changing an electrically programmable resistance...

Details Method of changing an electrically programmable resistance... Method of changing an electrically programmable resistance...

2007-03-20

2007-03-20

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C257S169000

Reexamination Certificate

active

11066592

ABSTRACT:
Resistive cross point memory devices are provided, along with methods of manufacture and use, including a method of changing an electrically programmable resistance cross point memory bit. The memory device comprises an active layer of perovskite material interposed between upper electrodes and lower electrodes. A bit region located within the active layer at the cross point of an upper electrode and a lower electrode has a resistivity that can change through a range of values in response to application of one, or more voltage pulses. Voltage pulses may be used to increase the resistivity of the bit region, decrease the resistivity of the bit region, or determine the resistivity of the bit region. Memory circuits are provided to aid in the programming and read out of the bit region.

REFERENCES:
patent: 5018102 (1991-05-01), Houston
patent: 6204139 (2001-03-01), Liu et al.
patent: 6535026 (2003-03-01), Chung et al.

Affiliated with

Also associated with

Rating

Method of changing an electrically programmable resistance... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of changing an electrically programmable resistance..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of changing an electrically programmable resistance... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3722833