Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-07
2006-03-07
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S154000, C438S300000, C257S345000, C257S351000
Reexamination Certificate
active
07009258
ABSTRACT:
The present invention provides improved controllability of the lateral etch encroachment of silicon under the spacer, in light of the fact that the exemplary method, in accordance with the present invention, comprises the step of implanting neutral ions such as Ge or Ar into the source/drain regions. The implantation creates an amorphous silicon surface, and leaves a laterally extended amorphous layer under the spacer and a well defined amorphous/crystalline interface. The etch of silicon then extends laterally underneath the spacer, due to the higher etch rate of amorphous silicon and abrupt interface between amorphous and crystalline silicon.
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Assaderaghi Fariborz
Mandelman Jack A.
Park Heemyong
Abate Joseph P.
Booth Richard A.
International Business Machines - Corporation
Whitham Curtis & Christofferson, P.C.
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