Method of bonding silicon and III-V semiconductor materials

Details Method of bonding silicon and III-V semiconductor materials Method of bonding silicon and III-V semiconductor materials

1993-06-01

1994-09-13

Thomas, Tom

Fishing, trapping, and vermin destroying

437225, 437974, 148DIG12, 148DIG135, H01L 21302

Patent

active

053468481

ABSTRACT:
A silicon wafer and a III-V semiconductor wafer are bonded together through a bonding interlayer which is deposited on the III-V semiconductor wafer. By forming the bonding interlayer on the III-V semiconductor wafer, rather than the silicon wafer, the bonding process is facilitated, creating a sufficiently strong bond to carry out further processing. The III-V semiconductor wafer is thinned to relieve stress after the bonding procedure. The bonded wafers may be subjected to a second bonding procedure to increase the bond strength. The bonded wafers can then be subjected to high temperature processing used in semiconductor device fabrication.

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