Method of bonding crystalline silicon bodies

Details Method of bonding crystalline silicon bodies Method of bonding crystalline silicon bodies

1984-08-16

1987-06-09

Czaja, Donald

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576J, 29589, 134 3, 357 49, H01L 21306

Patent

active

046718460

ABSTRACT:
A method of bonding two single-crystal silicon bodies comprises the steps of: (i) mirror-polishing the contact surfaces of the bodies to reduce the surface roughness to 500A or less; (ii) removing contaminant from the mirror-polished surfaces; and (iii) bringing the surfaces into mutual contact so that substantially no foreign substance enter the gap between these surfaces.

REFERENCES:
patent: 3239908 (1966-03-01), Nakamura
patent: 3397278 (1968-08-01), Pomerantz
patent: 4121334 (1978-10-01), Wallis
patent: 4463336 (1984-07-01), Black et al.
patent: 4501060 (1985-02-01), Frye et al.
Brooks et al., "Low Temperature Electrostatic Silicon-to-Silicon Seals . . . ", J. Electrochem. Soc., vol. 119, No. 4, Apr. 1972, pp. 545-546.
IEEE Trans. Electron Dev., vol. ED-16, No. 10, Oct. 1969, E. R. Peake, A. R. Zias, J. V. Egan: "Solid-State Digital Pressure Transducer".
IEEE Spectrum, vol. 18, No. 9, Sep. 1981, pp. 33-39, IEEE, New York, US; P. W. Barth: "Silicon Sensors Meet Integrated Circuits".

Affiliated with

Also associated with

Rating

Method of bonding crystalline silicon bodies does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of bonding crystalline silicon bodies, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of bonding crystalline silicon bodies will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1827133