Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1997-05-15
1998-10-06
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
G03F 900
Patent
active
058174397
ABSTRACT:
A mask and method of forming a mask which minimizes the light transmission in the border regions of attenuating phase shifting masks. The mask uses square contact holes formed in the attenuating phase shifting material in the border regions. The square contact holes are located at the edge of the mask pattern region beginning at each corner of the mask pattern region and working toward the center of each side of the mask pattern region using a contact hole pitch. At the center of each side of the mask pattern region the pitch is discontinuous and a row of rectangular contact holes are formed.
REFERENCES:
patent: 5411823 (1995-05-01), Okamoto
patent: 5565286 (1996-10-01), Lin
patent: 5578422 (1996-11-01), Mizuno et al.
patent: 5593801 (1997-01-01), Yoshioka et al.
patent: 5656400 (1997-08-01), Hasegawa et al.
patent: 5725971 (1996-02-01), Moriuchi et al.
Yuan et al, "Implementing Attenuated Phase Shift Mask for Contacts in Production", Microprocess Conference 1994, pp. 6796-6800.
Yoshioka et al, "Practical Attenuated Phase-Shifting Mask with a Single Layer Absorptive Shifter of MoSiO and MoSiON for ULSI Fabrication", Proc. 1993 IEEE Int. Electron Device Meeting, Wash. DC pp. 653-656.
Chen Yi-Hsu
Tu Chih-Chiang
Tzu San-De
Ackerman Stephen B.
Prescott Larry J.
Rosasco S.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Method of blind border pattern layout for attenuated phase shift does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of blind border pattern layout for attenuated phase shift, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of blind border pattern layout for attenuated phase shift will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-75347