Method of avoiding dielectric layer deterioation with a low...

Details Method of avoiding dielectric layer deterioation with a low... Method of avoiding dielectric layer deterioation with a low...

2005-12-27

2005-12-27

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C216S079000, C216S099000, C438S743000, C438S745000, C438S756000

Reexamination Certificate

active

06979654

ABSTRACT:
A low k dielectric layer is formed on a surface of a substrate of a semiconductor wafer. Then, a surface treatment is performed to the low k dielectric layer to form a passivation layer on a surface of the low k dielectric layer. A patterned photoresist layer is formed over the surface of the semiconductor wafer. The patterned photoresist layer is then used as a hard mask to perform an etching process on the low k dielectric layer. Finally, a stripping process is performed to remove the patterned photoresist layer. The passivation layer is used to prevent deterioration of the dielectric characteristic of the low k dielectric layer during the stripping process.

REFERENCES:
patent: 6165891 (2000-12-01), Xu et al.

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