Method of assembling a wafer-level package filter

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

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C029S729000, C029S739000, C029S758000, C029S764000, C029S876000, C310S348000, C310S340000, C310S344000, C439S133000, C439S306000, C439S307000, C439S546000, C439S578000

Reexamination Certificate

active

07596849

ABSTRACT:
A wafer level package filter includes a device wafer having an acoustic wave device disposed on its surface, the acoustic wave device including at least an acoustic wave resonator associated with a piezoelectric substrate and a connecting pad. A capped substrate includes circuitry having inductors and capacitors. The capped substrate has a coefficient of thermal expansion significantly unequal to a coefficient of thermal expansion for the piezoelectric substrate. An adhesive bond connects the capped substrate to the device wafer for encapsulating the acoustic wave device within a cavity. A dielectric overcoat is deposited over a portion of the capped substrate, and a metallization layer extends over a portion of the dielectric layer connecting the capped substrate circuitry to a connecting pad of the acoustic wave device. Optionally, a bond connecting the capped substrate to the device wafer may provide an interlocking connection.

REFERENCES:
patent: 4578853 (1986-04-01), Wurth
patent: 5859486 (1999-01-01), Nakahara et al.
patent: 5894654 (1999-04-01), Varis et al.
patent: 6323571 (2001-11-01), Nakahara et al.

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