Method of ashing resist and apparatus therefor

Details Method of ashing resist and apparatus therefor Method of ashing resist and apparatus therefor

1995-12-29

1997-11-18

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 67, 1566431, 15665911, 156345, C23F 100, H01L 21306

Patent

active

056884109

ABSTRACT:
An object of the invention is to enhance the ashing speed of resist. A parallel plate electrode type plasma etching device is used in a mixed gas atmosphere of SF.sub.6 gas and O.sub.2 gas with the concentration of SF.sub.6 gas defined within 5 vol. % to 15 vol. %. A substrate to be treated, coated with a resist of hydrocarbon polymer is placed on a lower electrode. A high frequency electric power is applied to an upper electrode and lower electrode placed parallel to each other, and a plasma of mixed gas is generated in the reactor. A chemical reaction is induced in the resist and active ions of the plasma to vaporize and remove the resist.

REFERENCES:
patent: 5047115 (1991-09-01), Charlet et al.
patent: 5057187 (1991-10-01), Shinagawa et al.
patent: 5298112 (1994-03-01), Hayasaka et al.
patent: 5536364 (1996-07-01), Yoshida et al.
"A Plasma Oxidation . . . Photoresist Films", by S.M. Irving, Solid State Technology, Jun. 1971, vol. 14, pp. 47-51.

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