Method of ashing layers, and apparatus for ashing layers

Details Method of ashing layers, and apparatus for ashing layers Method of ashing layers, and apparatus for ashing layers

1987-07-15

1989-03-14

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 20419232, 430329, H01L 21302

Patent

active

048122017

ABSTRACT:
A method and an apparatus, both for ashing unnecessary layers such as a photoresist layer, formed on a semiconductor wafer, by applying ozone to the layer, are disclosed. An ashing gas containing oxygen atom radical, or containing oxygen gas and an ashing-promoting gas, is applied to the layer, thereby ashing the layer readily and efficiently. The surface temperature of the layer is set at a prescribed value, and the ashing gas is applied uniformly onto the entire surface of the layer, or onto a part thereof, thus ashing the whole layer, or a part thereof, uniformly at a high rate, and the end-point of the ashing process is detected, thereby to enhance the efficiency of the ashing process.

REFERENCES:
patent: 4201579 (1980-05-01), Robinson et al.
patent: 4296146 (1981-10-01), Penn
patent: 4341592 (1982-07-01), Shortes et al.

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