Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1984-05-03
1985-04-02
Smith, John D.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
427 82, 4273855, 4274071, 430272, 430296, 430935, H01L 21316
Patent
active
045088128
ABSTRACT:
Disclosed is a method of pretreating a semiconductor wafer so that a solution coating of a positive resist of poly(methacrylic anhydride) can be directly applied to the treated surface. A typical semiconductor wafer of silicon is first precoated with a thin layer of poly(t-butyl methacrylate) and then heated to convert the poly(t-butyl methacrylate) to the anhydride. The thickness of this anhydride-precursor layer is less than about 1,000 Angstroms. Next, there is applied to the surface of the precursor layer a solution of the poly(methacrylic anhydride) dissolved in, for example, dimethylacetamide, dimethylformamide, or N-methylprrolidione. Such solvents, which are not capable of adequately wetting the silicon surface directly, are capable of wetting the precursor layer comprising poly(methacrylic anhydride), thus ensuring a uniform deposit of poly(methacrylic anhydride) upon the treated surface of the wafer. After the solution has been applied to the treated wafer, the solvent is removed by evaporation to form a uniform solution-deposited poly(methacrylic anhydride) layer having a thickness which ranges from about 2,000 Angstroms to about 20,000 Angstroms.
REFERENCES:
patent: 3779806 (1973-12-01), Gipstein
patent: 4087569 (1978-05-01), Hatzakis
patent: 4264715 (1981-04-01), Miura
patent: 4476217 (1984-10-01), Douglas
Collins David W.
Hughes Aircraft Company
Karambelas Anthony W.
Smith John D.
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