Method of applying optical coatings of silicon compounds by cath

Details Method of applying optical coatings of silicon compounds by cath Method of applying optical coatings of silicon compounds by cath

1987-01-27

1990-12-18

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 20419226, 20429813, C23C 1434

Patent

active

049784374

ABSTRACT:
Method of applying optical coatings of silicon compounds to substrates by reactive cathode sputtering of siliceous target materials. To solve the problem of improving the utilization of the target material and eliminating the blowout of particles from the target, the target of the invention is a polycrystalline silicon casting of at least 99% silicon containing dopants from the group, boron, antimony, phosphorus and arseic, and it is sputtered by direct current in an atomsphere containing the reaction gas.

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patent: 4430185 (1984-02-01), Shimomoto et al.
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Suzuki et al., "Doping Effects of Group III and V Element on a --Si Prepared by High Pressure rf Sputtering", Japanese Journal of Applied Physics, vol. 19 (1980), Supplement 19-2, pp. 85-89.
Thorton et al., "Internal Stresses in Amorphous Silicon Films Deposited by Cylindrical Mag. Sputtering Using Me, Ar, Kr, Xe and Ar+H.sub.2 ", J. Vac. Science Technol., 18(2), 3/81, pp. 203-207.

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