Method of applying contacts to a silicon wafer and product forme

Details Method of applying contacts to a silicon wafer and product forme Method of applying contacts to a silicon wafer and product forme

1978-06-13

1982-08-31

Robinson, Ellis P.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

29572, 148189, 156648, 357 30, 427 88, 428199, 428209, 428210, 428450, 428433, 136261, B05D 512, F16L 5510, H01L 3100

Patent

active

043472648

ABSTRACT:
Metal contacts are deposited on a clean surface of a silicon wafer by coating the wafer with a glass during diffusion to form a junction inwardly of the surface, applying a photoresist layer to the glass, phtographing and developing a pattern for the contacts on the photoresist layer, etching out underlying portions of the glass layer, depositing the metal contacts in the voids so created, and then removing the entirety of the photoresist and glass layers.

REFERENCES:
patent: 3361594 (1968-01-01), Iles
patent: 3533850 (1970-10-01), Tarneja
patent: 3653970 (1972-04-01), Iles
patent: 3904453 (1975-09-01), Revesz
patent: 3922774 (1975-12-01), Lindmayer
patent: 3949463 (1976-04-01), Lindmayer
patent: 4005240 (1977-01-01), Schlacter

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