Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-08-09
2005-08-09
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S612000, C438S613000, C438S614000, C257S295000, C365S158000, C365S171000, C365S172000, C365S173000
Reexamination Certificate
active
06927072
ABSTRACT:
A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed in a first bath containing dissolved ions of a first conductive material for a time sufficient to displacement plate a first barrier layer on the conductive line. The first barrier layer is then immersed in an electroless plating bath to form a flux concentrating layer on the first barrier layer. The flux concentrating layer is immersed in a second bath containing dissolved ions of a second conductive material for a time sufficient to displacement plate a second barrier layer on the flux concentrating layer.
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D'Urso John
Engel Bradley N.
Grynkewich Gregory W.
Kyler Kelly
Molla Jaynal A.
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz P.C.
Le Dung A.
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