Method of applying a program voltage for a non-volatile semicond

Details Method of applying a program voltage for a non-volatile semicond Method of applying a program voltage for a non-volatile semicond

1989-12-11

1991-11-26

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

36518906, G11C 1140, G11C 1300

Patent

active

050688278

ABSTRACT:
In a method of applying a voltage pulse for injecting/extracting electrons into/from a non-volatile semiconductor memory in which high and low levels of a threshold voltage corresponding to presence and absence of storage of electrons are caused to correspond to binary information, the method includes the steps of generating a plurality of voltage pulses each having an ability of injecting or extracting only a portion of all electrons to be stored, and applying the plurality of voltage pulses to the non-volatile semiconductor memory to thereby carry out injection/extraction of all the electrons.

REFERENCES:
patent: 4964081 (1990-10-01), Birrittella et al.

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