Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2006-10-03
2006-10-03
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S205000, C365S189110
Reexamination Certificate
active
07116596
ABSTRACT:
A differential sensing circuit and sensing method are provided for use in a low voltage memory device. The sensing circuit includes a cross-coupled sensing circuit for coupling with a memory element, a pull-up circuit and a multistage pull-down circuit. The multistage pull-down circuit accelerates the latching process of the cross-coupled sensing circuit by briefly pulling the cross-coupled sensing circuit to a potential below ground in order to increase the gate potential differential on at least a portion of the transistors within the cross-coupled sensing circuit. Once the latching transitions have commenced at an acceptable rate, the below-ground potential is removed and the traditional logic level pull-up and ground-potential pull-down circuits are activated.
REFERENCES:
patent: 4669063 (1987-05-01), Kirsch
patent: 4692642 (1987-09-01), Fukuzo et al.
patent: 4694205 (1987-09-01), Shu et al.
patent: 4855628 (1989-08-01), Jun
patent: 5042011 (1991-08-01), Casper et al.
patent: 5245578 (1993-09-01), McLaury
patent: 5438543 (1995-08-01), Yoon
patent: 5544110 (1996-08-01), Yuh
patent: 5614856 (1997-03-01), Wilson et al.
patent: 5638333 (1997-06-01), Lee
patent: 5646899 (1997-07-01), Jang et al.
patent: 6157586 (2000-12-01), Ooishi
patent: 6320798 (2001-11-01), Jo et al.
patent: 6385103 (2002-05-01), Endo
patent: 6477100 (2002-11-01), Takemura et al.
patent: 6522593 (2003-02-01), Kim et al.
patent: 6661714 (2003-12-01), Lee
patent: 6873559 (2005-03-01), Ueda
Nobutaro Shibata, “Current Sense Amplifiers for Low-Voltage Memories”, IEICE Trans. Electron., Aug. 1997, pp. 1120-1130, vol. E79-C, No. 8.
Auduong Gene N.
Micro)n Technology, Inc.
TraskBritt
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