Method of annealing film stacks and device having stack produced

Details Method of annealing film stacks and device having stack produced Method of annealing film stacks and device having stack produced

1996-07-08

1998-06-09

Dutton, Brian

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438760, H01L 214763, H01L 2131, H01L 21469

Patent

active

057633223

ABSTRACT:
An annealing method includes providing a wafer having a film stack including at least a flowable film and a semirigid film formed on the flowable film. The film stack is exposed to an initial temperature followed by exposure to an intermediate temperature for an intermediate exposure time period. Then, the film stack is exposed to a final anneal temperature for a final anneal exposure time period. The film stack may include another nonflowable or flowable film formed on the semirigid film. The film stack may be exposed to one or more additional intermediate temperatures for additional intermediate exposure time periods. The film stack may be an oxide/polysilicon/oxide film stack and the oxide films may be doped oxides. A device or wafer having a film stack annealed in accordance with the annealing method is also provided.

REFERENCES:
patent: 5387557 (1995-02-01), Takagi

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