Method of anisotropically etching silicon wafers and wafer etchi

Details Method of anisotropically etching silicon wafers and wafer etchi Method of anisotropically etching silicon wafers and wafer etchi

1989-10-03

1990-07-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156628, 156657, 1566591, 156662, 252 791, 252 794, H01L 21306, B44C 122, C09K 1300, C03C 1500

Patent

active

049419412

ABSTRACT:
An improved method for anisotropically etching the (100) crystallographic plane of silicon wafers, involves immersing the wafers in an etching solution containing an aromatic compound having at least two adjacent hydroxyl groups and a polar functional group on the ring, an amine and water. A quality etch at an appreciably greater rate is achieved.

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Hoeg, A. et al., "Metallic Free Organic Aluminum Etchant", IBM Tech. Discl. Bull., vol. 15, No. 1, (Jun. 1972), p. 173.
Bassous, E., "Controlled Anisotropic Etching of Single Crystal Silicon", IBM Tech. Discl. Bull., vol. 19, No. 9, (Feb. 1977), p. 3623.
Barran, E. F. et al., "Anisotropic Etching Solution with High Etch Rate on Single Crystal Silicon", IBM Tech. Discl. Bull., vol. 19, No. 10, (Mar. 1977), p. 3953.

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