Method of anisotropic dry etching of thin film semiconductors

Details Method of anisotropic dry etching of thin film semiconductors Method of anisotropic dry etching of thin film semiconductors

1990-02-22

1993-03-16

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, H01L 2100

Patent

active

051941198

ABSTRACT:
A microwave ECR plasma etching method and apparatus employs a combination reactive gas medium supplied to a microwave excitation ECR plasma chamber coupled to a treatment chamber containing a Group II-VI sample to be etched. A reactive gas plasma is formed containing reactive species in the plasma chamber and the Group II-VI sample is irradiated with a beam of reactive species formed from the reactive gas plasma. The reactive gas medium is selected from the group consisting of a hydrogen halogenate, a mixture of a halogen gas and an inert gas, a mixture of a halogen gas and hydrogen gas, a mixture of a halogen gas, an inert gas and hydrogen gas, and a mixture of a halogen gas and nitrogen gas.

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