Method of anhydrous hydrogen fluoride etching

Details Method of anhydrous hydrogen fluoride etching Method of anhydrous hydrogen fluoride etching

1989-12-21

1991-12-17

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

252 793, 156345, H01L 21306

Patent

active

050732323

ABSTRACT:
Disclosed is a dry-etching apparatus composed of any of metal, silica, ceramic or combination thereof including a processing chamber in which substrates are placed and a diluted anhydrous hydrogen fluoride gas generator, the processing chamber being connected to the diluted anhydrous hydrogen fluoride gas generator through a pipe line of such metal as stainless steel or nickel. There is also provided according to the invention a dry-etching method with the dry-etching apparatus, a cooled anhydrous hydrogen fluoride gas source and a diluted anhydrous hydrogen gas generator used in the dry-etching apparatus and dry-etching method.

REFERENCES:
patent: 4749440 (1988-06-01), Blackwood et al.
Baklanov et al., Kinetics of the etching of silica layers by gaseous hydrogen fluoride, Izv. Sib. Otd. Akad. Nauk SSSR Ser. Khim. Nauk, (1), 25-29, (1987).
Zazzera et al., XPS and SIMS Study of Anhydrous HF and UV/ozone Modified Silicon Surfaces, ECS Symposium Abstract, No. 188, (1988).

Affiliated with

Also associated with

Rating

Method of anhydrous hydrogen fluoride etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of anhydrous hydrogen fluoride etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of anhydrous hydrogen fluoride etching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-833745