Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2006-04-17
2009-10-27
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S542000, C257S077000, C257SE21274
Reexamination Certificate
active
07608524
ABSTRACT:
In a physical vapor transport method and system, a growth chamber charged with source material and a seed crystal in spaced relation is provided. At least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant, is also provided. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
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Barrett Donovan L.
Gupta Avinash K.
Semenas Edward
Souzis Andrew E.
Zwieback Ilya
II-VI Incorporated
Sarkar Asok K
Slutsker Julia
The Webb Law Firm
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