Method of and device for planarizing a surface of a semiconducto

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430269, 430323, 430396, G03F 700

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active

060108282

ABSTRACT:
The present invention provides a method of and a device for planarizing a photosensitive material, such as a photoresist, located over an irregular surface of a semiconductor wafer. In one embodiment, the method comprises the steps of passing radiation through a first medium and a second medium wherein the first medium is interfaced with the second medium. The method further comprises the steps of passing the radiation from the second medium into the photosensitive material that is interfaced with the second medium to expose the photosensitive material. The first and second mediums and the photosensitive material have radiation absorption coefficients such that the radiation terminates substantially within a plane of the photosensitive material. The method further includes the step of etching the exposed photosensitive material to the plane.

REFERENCES:
patent: 4575330 (1986-03-01), Hull
patent: 5447822 (1995-09-01), Hull et al.
patent: 5747221 (1998-05-01), Kim et al.
patent: 5773367 (1998-06-01), Jen
patent: 5804514 (1998-09-01), Kwon

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