Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2006-12-12
2006-12-12
McDonald, Rodney G. (Department: 1753)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C216S067000, C216S059000, C156S345330, C156S345340, C204S298070, C204S298320, C204S298330
Reexamination Certificate
active
07147793
ABSTRACT:
An etch profile tailoring system (100), for use with an etching process carried out on a wafer (130), has a scavenging plate (170) with a baseline etch profile, and at least one etch profile tuning structure (such as a plug) (160) replaceably disposed with respect to the scavenging plate (170) and configured to alter the baseline etch profile during the etching process so as to arrive at a desired etch profile. A method of performing maintenance on an etch profile tailoring system (100) involves the steps of performing an etching process on a wafer in accordance with a desired etch profile, determining whether or not maintenance should be performed, and (if the maintenance decision indicates that maintenance should be performed) replacing with a second plug before conducting an etching process on additional wafers.
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McDonald Rodney G.
Tokyo Electron Limited
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