Method of and apparatus for stabilizing shapes of objects, such

X-ray or gamma ray systems or devices – Specific application – Lithography

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378 84, 378 35, 2504921, 359846, G21K 502

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active

053902289

ABSTRACT:
A temperature distribution of an object, such as an optical element, onto which radiation energy is irradiated, is measured. The change of the shape of the object is controlled by varying the temperature of a part of the object on the basis of the measured temperature distribution to stabilize the shape of the object. Also, the shape of the object being irradiated is stabilized by causing the same temperature distribution in the object when in the thermally stable condition to be generated in the object while it is being irradiated. If the shapes of masks used to manufacture semiconductor devices are stabilized by using the above methods, highly integrated semiconductor devices can be manufactured.

REFERENCES:
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patent: 5004319 (1991-04-01), Smither
patent: 5052033 (1991-09-01), Ikeda et al.
patent: 5063582 (1991-11-01), Mori et al.
patent: 5138643 (1992-08-01), Sakamoto et al.
T. Oversluizen, et al., "Performance of a Directly Water-Cooled Silicon Crystal for Use in High-Power Synchrotron Radiation Applications", Rev. Sci. Instrum. vol. 60, No. 7, pp. 1493-1500 (Jul. 1989).
A. M. Hawryluk, et al., "Reflection Mask Technology for X-ray Projection Lithography", Journal of Vacuum Science & Technology, B7, No. 6, pp. 1702-1704 (Nov./Dec. 1989).
K. Asch, et al., "Method of Keeping a Proximity Printing Mask at a Constant Temperature", IBM Technical Disclosure Bulletin, vol. 26, No. 7A, p. 3261 (Dec. 1983).

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