Method of and apparatus for measuring lifetime of carriers in se

Details Method of and apparatus for measuring lifetime of carriers in se Method of and apparatus for measuring lifetime of carriers in se

1996-06-06

1998-06-02

Karlsen, Ernest F.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324752, G01R 3126

Patent

active

057605971

ABSTRACT:
In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample that is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substances that exist in the solution, largely changes a surface potential of the semiconductor sample, and suppresses surface recombination. This makes it possible to measure the lifetime of carriers which exist within the semiconductor sample at a high accuracy, without influenced by surface recombination.

REFERENCES:
patent: 3939415 (1976-02-01), Terasawa
patent: 4704576 (1987-11-01), Tributsch et al.
patent: 5047713 (1991-09-01), Kirino et al.
patent: 5049816 (1991-09-01), Moslehi
patent: 5196786 (1993-03-01), Usami et al.
patent: 5406214 (1995-04-01), Boda et al.
patent: 5430386 (1995-07-01), Morin et al.
patent: 5438276 (1995-08-01), Kawata et al.
Horanyi, T.S., Pavelka, T. and Tutto, P., "In situ bulk lifetime measurement on silicon with a chemically passivated surface," Applied Surface Science, vol. 63 (1993) pp. 306-311. Jul. 1992.

Affiliated with

Also associated with

Rating

Method of and apparatus for measuring lifetime of carriers in se does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of and apparatus for measuring lifetime of carriers in se, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of and apparatus for measuring lifetime of carriers in se will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1464494