Method of and apparatus for measurement and control of a gas...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S287000, C250S282000, C438S515000, C427S450000

Reexamination Certificate

active

07067828

ABSTRACT:
Methods and apparatus are disclosed for measuring controlling characteristics of clusters in a cluster ion beam, including average cluster ion velocity {overscore (v)}, average cluster ion mass {overscore (m)}, average cluster ion energy Ē, average cluster ion charge state {overscore (q)}, average cluster ion mass per charge(mq)average,and average energy/charge(Eq)average.The measurements are employed in gas cluster ion beam processing systems to monitor and control gas cluster ion beam characteristics that are critical for optimal processing of workpieces by gas cluster ion beam irradiation.

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Mack, M.E. “Design Issues in Gas Cluster Ion Beamlines.” Ion Implant Technology, IEEE, Proceedings of the 14thInternational Conference on, Sep. 22-27, 2002. pp. 665-668.

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