Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-06-27
2006-06-27
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S287000, C250S282000, C438S515000, C427S450000
Reexamination Certificate
active
07067828
ABSTRACT:
Methods and apparatus are disclosed for measuring controlling characteristics of clusters in a cluster ion beam, including average cluster ion velocity {overscore (v)}, average cluster ion mass {overscore (m)}, average cluster ion energy Ē, average cluster ion charge state {overscore (q)}, average cluster ion mass per charge(mq)average,and average energy/charge(Eq)average.The measurements are employed in gas cluster ion beam processing systems to monitor and control gas cluster ion beam characteristics that are critical for optimal processing of workpieces by gas cluster ion beam irradiation.
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Cohen Jerry
Epion Corporation
Hamilton John A.
Hashmi Zia R.
Wells Nikita
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